Toshiba Electronic Devices & Storage Corporation has extended its U-MOS X-H series with the new 80V N-channel power MOSFETs that are designed with the latest generation process. The expanded line-up includes "TPH2R408QM," housed in SOP Advance, a surface-mount type packaging, and "TPN19008QM," housed in a TSON Advance package.
The new 80V U-MOS X-H products have 40% lower drain-source on-resistance when compared with the current generation. They also have an improved trade-off between the drain-source on-resistance and the gate charge characteristics because of the optimized device structure.
Features of TPH2R408QM and TPN19008QM
|
Parameter |
TPH2R408QM |
TPN19008QM |
|
Drain Source Voltage (Vds) |
80V |
80V |
|
Drain Current |
120A |
120A |
|
On-Resistance @ Vgs = 6V |
3.5 mΩ |
28 mΩ |
|
Gate switch Charge |
28nC |
5.5nC |
|
Input Capacitance |
5870pF |
1020pF |
|
Package |
SOP |
TSON |
With the lowest power dissipation, these new MOSFETs are suitable for switching power supplies in industrial equipment such as High-efficiency AC-DC converters, DC-DC converters, etc. that are used in centers and communication base stations and also in motor control equipment. For more information about TPH2R408QM and TPN19008QM, visit the product page.
