STMicroelectronics has introduced 18nm FD-SOI microcontrollers, representing a significant advancement in embedded processing technology, developed in collaboration with Samsung Foundry. These microcontrollers offer a range of benefits including enhanced performance, improved power efficiency, expanded memory capacity, advanced integration capabilities, and enhanced RF performance. Compared to traditional 40nm eNVM technology, the 18nm FD-SOI microcontrollers deliver impressive improvements. They provide over a 50% enhancement in performance-to-power ratio and offer 2.5 times higher NVM density with ePCM technology. These advancements make them well-suited for a wide array of applications across automotive, aerospace, industrial, medical, and networking sectors. Notably, these microcontrollers boast three times higher digital density, enabling seamless integration of AI, graphics accelerators, and advanced security features. Additionally, they feature a significant 3dB improvement in noise figure, ensuring superior RF performance in wireless MCU units, thus meeting the requirements of modern communication systems.
The technology behind these microcontrollers is underpinned by two key innovations. First, an ultra-thin insulator layer atop the base silicon enhances transistor control and reduces leakage currents. Second, a thin silicon film for transistor channel implementation further optimizes performance. Designed to operate at 3V, these microcontrollers support various analog features such as power management and digital/analog converters. Moreover, these microcontrollers are engineered to deliver reliability in demanding industrial environments. They feature robust high-temperature operation and radiation hardening, ensuring consistent performance even under harsh conditions.
