Microchip Technology aims to provide automotive solutions to help designers and developers in easy transition to SiC while minimizing the risk of quality, supply, and support challenges. With this aim in mind, the company is here with yet another smart device that caters to the needs of the automotive industry.
The company has released the AEC-Q101-qualified 700 and 1200V SiC Schottky Barrier Diode (SBD) power devices for EV power designers to increase system efficiency and maintaining high quality. This will help them in meeting stringent automotive quality standards across a wide range of voltage, current, and package options.
Maximizing system reliability and ruggedness and enabling stable and lasting application life, the newly introduced devices offer superior avalanche performance enabling designers to reduce the need for external protection circuits, reducing system cost and complexity too.
The new SiC SBD ruggedness testing demonstrates 20% higher energy withstand in Unclamped Inductive Switching (UIS) provides the lowest leakage currents at elevated temperatures, thereby increasing system life.
Improved system efficiency with lower switching losses, higher power density for similar power topologies, higher operating temperature, reduced cooling needs, smaller filters, and passives, higher switching frequency, low Failure In Time (FIT) rate for neutron susceptibility than Insulated Gate Bipolar Transistors (IGBTs) at rated voltages and low parasitic (stray) inductance are the additional unique features of the new 700 and 1200V SiC Schottky Barrier Diode (SBD) power devices.
Microchip’s AEC-Q101 qualified 700 and 1200V SiC SBD devices (also available as die for power modules) for automotive applications are available for volume production orders.
