Toshiba Electronic Devices and Storage Corporation has introduced two new 100V N-channel power MOSFET namely XPH4R10ANB and XPH6R30ANB. These are the Toshiba’s first 100V N-channel power MOSFETs in compact SOP Advance (WF) package for automotive applications. The low On-resistance XPH4R10ANB has a drain current of 70A while the XPH6R30ANB has a drain current of 45A. The wettable flank terminal structure increases the reliability of the package as it allows automatic visual inspection when mounted on a circuit board. The low on-resistance of these MOSFETs helps in reducing power consumption and the XPH4R10ANB delivers industry-leading low On-resistance.
Features of XPH4R10ANB and XPH6R30ANB Power MOSFET
- Toshiba’s first 100V products for automotive applications using a small, surface mount SOP Advance (WF) package
- Operate at a channel temperature of 175°C
- Low On-resistance:
RDS(ON)=4.1mΩ (max) @VGS=10V (XPH4R10ANB)
RDS(ON)=6.3mΩ (max) @VGS=10V (XPH6R30ANB) - AEC-Q101 qualified
- SOP Advance (WF) package with wettable flank terminal structure
These MOSFETs can be used in automotive equipment like power supply (DC/DC converter) and LED headlights, etc. (Motor drives, switching regulators and load switches). For more detail about XPH4R10ANB and XPH6R30ANB, visit the respective product pages on the official website of Toshiba Electronic Devices & Storage Corporation.
