Targeting to increase the power density and efficiency in various power supply circuits, Vishay Intertechnology has introduced its new SiSF20DN common-drain dual n-channel 60V MOSFET. This IC comes within a compact 1212-8SCD thermally enhanced PowerPAK package. The company claims that its device is featured to provide Rs-s (ON) down to 10mΩ at 10 volts with a 3 mm by 3 mm footprint. This IC’s targeted application ensures to increase the power density and efficiency in battery management systems, plug-in and wireless chargers, DC/DC converters, powerless chargers, etc.
Features of SiSF20DN N-Channel MOSFET:
- Common drain configuration with N-channel
- Drain Source Voltage (VDS) = 60V
- Gate Source Voltage (VGS) = 20V
- Drain Source Resistance (RDS ) = 0.0065 at 10V
- Maximum Output Power (PD max) = 69.4W
- Maximum Drain Current (ID) = 52A
- Very low source-to-source on resistance
- Compact and thermally enhanced package
- Optimizes circuit layout for bi-directional current flow
- 100% Rg and UIS tested
To save PCB space, reduce component counts and simplify designs, the device uses an optimized package construction with two monolithically integrated TrenchFET Gen IV N‑channel MOSFETs in a common drain configuration. Due to the design of the SiSF20DN source contacts, there is an increase in its contact area with the PCB and a decrease in resistivity. This design makes the MOSFET to work as a bidirectional switching in 24V Systems and industrial applications, factory automation, power tools, drones, motor drives, white goods, robotics, security surveillance, and smoke alarms.
The SiSF20DN is 100% Rg- and UIS-tested, RoHS-compliant, and halogen-free. Samples and production quantities of the new MOSFET are available now, with lead times of 30 weeks for larger orders. For more details on the SiSF20DN visit the official page or refer to the datasheet of this product.
