To meet the rising demand of small footprint, easy to use drivers, Infineon Technologies has released a new generation single-channel EiceDRIVER X3 compact 1ED31xx isolated gate driver in DSO-8 300 mil package. The new device offers a separate sink and source output, accurate and stable timing, active shutdown for silicon carbide (SiC) MOSFET 0 V turn off in various industrial drives, solar systems, EV charging, and other applications.
The X3 compact 1ED31xx gate driver comes with an active Miller clamp option which is best suited for silicon carbide (SiC) MOSFET 0 V turn off. It offers a CMTI of 200 kV/μs, and a typical 5, 10, and 14 A output current. The device is recognized under UL 1577 with an insulation test voltage of 5.7 kV RMS. Moreover, it offers 14 A high output current, which makes it well suited for high switching frequency applications as well as for IGBT 7 that requires a much higher gate driver output current compared to IGBT 4. Not only that, but this new device also avoids faulty switching patterns.
With a 40 V absolute maximum output supply voltage, 1ED31xx is perfectly fit for rugged environments. The input filter that the gate driver comes integrated with reduces the need for external filters, provides accurate timing, and lowers BOM cost. The 1ED31xx gate driver is perfect for super junction MOSFETs such as CoolMOS, SiC MOSFETs like CoolSiC, and IGBT modules. The EiceDRIVER X3 Compact and the evaluation boards (EVAL-1ED3121MX12H, EVAL-1ED3122MX12H, EVAL-1ED3124MX12H) are available on the company website.
