STGAP2SiCS from STMicroelectronics is a highly optimized galvanically isolated gate driver that operates from a high-voltage rail up to 1200V and ensures safe control of Silicon Carbide (SiC) MOSFETs. Housed in a wide-body SO-8W package that ensures 8mm creepage within a compact footprint, the STGAP2SiCS is loaded with smart features.
The device is capable of producing a gate-driving voltage up to 26V, and it has raised the Under-Voltage Lockout (UVLO) threshold of 15.5V to meet the turn-on requirements of SiC MOSFETs. The driver features dual input pins that let designers determine the gate-drive signal polarity and its driving voltage is too low, which can be caused by the low supply voltage.
Its 4A output-sink/source capability is suited to mid-and high-power converters, power supplies, and inverters in equipment such as high-end home appliances, industrial drives, fans, induction heaters, welders, and UPSes. With 6kV of galvanic isolation between the input section and the gate-driving output, the STGAP2SiCS helps ensure safety in consumer and industrial applications.
There are two different output configurations available. One has separate output pins that allow independent optimization of turn-on and turn-off times using a dedicated gate resistor. While the second is featured for high-frequency hard switching, with a single output pin and active Miller clamp that limits oscillation of the SiC MOSFET gate-source voltage to prevent unwanted turn-on and enhance reliability. The input circuitry is compatible with CMOS/TTL logic down to 3.3V, which allows easy interfacing with a wide variety of control ICs.
The STGAP2SiCS features a standby mode that helps cut system power consumption. Besides, built-in protection including hardware interlocks to prevent cross conduction and thermal shutdown of both the low-voltage section and the high-voltage driving channel. Priced at $2.00 in quantities of 1000 units, this device is available on the company website
