Infineon Technologies released its new 1200V TRENCHSTOP IGBT7 and emitter-controller EC7 diodes based on the new micro-pattern trench technology with industry-standard EasyPIM housing for the current classes 10A and 25A. . The new released TRENCHSTOP IGBT7 chip performs with much lower static losses compared to the IGBT4. The devices released today provide higher power density, lower system cost and are fit to the needs of the industrial drive applications. Also its on-state voltage is reduced by 20% and offers the operating temperature up to +1750C.
The new TRENCHSTOP modules are equipped with Infineon’s reliable PressFit mounting technology for low ohmic resistance and reduced process time. The IGBT7 modules are designed with same pin out as previous IGBT4 module which helps manufacturers in reducing the design efforts. Also the devices are marked by softer switching and improved controllability. More importantly, the new modules enable a higher output current in the same package or the similar output current in the smaller package.
The samples of the TRENCHSTOP modules are available and comes in the lead types of FP10R12W1T7_B11, FP25R12W1T7_B11 and FS100R12W2T7_B11.
