STMicroelectronics has introduced the new MDmesh M9 and DM9 N-channel super-junction multi-drain silicon power MOSFETs series that are ideal for switched-mode power supplies (SMPS) in applications from data-center servers and 5G infrastructure to flat-panel televisions. The first devices to be launched are the 650V STP65N045M9 and the 600V STP60N043DM9 which have very low on-resistance (RDS(on)) per unit area, which maximizes power density and permits compact system dimensions.
The MDmesh M9 and DM9 series feature a very low reverse recovery charge (Qrr) and reverse recovery time (trr), which contribute to improved efficiency and switching performance. The gate threshold voltage (VGS(th)), typically 3.7V for the STP65N045M9 and 4.0V for STP60N043DM9, minimizes both turn-on and turn-off switching losses. Each has the best maximum RDS(on) (RDS(on)max) in its category, at 45mΩ for the STP65N045M9 and 43mΩ for the STP60N043DM9.
Key Features
- Increased level of power
- Extremely high efficiency and increased power density
- Improved system reliability and robustness
- Higher operating frequencies and better thermal management
Moreover, feature of ST’s latest high-voltage MDmesh technologies is an additional platinum diffusion process that ensures a fast intrinsic body diode. The peak diode-recovery slope (dv/dt) is greater than for earlier processes. All devices belonging to MDmesh DM9 technology are extremely rugged and can withstand dv/dt up to 120V/ns at 400V.
