ROHM is proud to introduce a groundbreaking lineup of dual MOSFETs designed to meet the demands of fan motor drives in communication base stations and industrial equipment. This innovative series integrates two 100V chips within a single package and offers remarkable advantages for a variety of applications.
In recent years, there has been a notable shift towards higher voltage systems, moving away from traditional 12V/24V setups to 48V configurations in communication base stations and industrial equipment. This shift aims to enhance overall efficiency by reducing current requirements. However, this transition necessitates MOSFETs with a 100V withstand voltage to accommodate voltage fluctuations, especially in the fan motors used for cooling these applications.
A major challenge arises when increasing the breakdown voltage, which often results in elevated ON resistance (RDS (on)). This creates a trade-off between lower RDS (on) and higher breakdown voltage, ultimately reducing efficiency. To further complicate matters, the conventional approach of employing multiple individual drive MOSFETs for fan motors consumes significant space. To address these challenges, ROHM has introduced two cutting-edge series: the HP8KEx/HT8KEx (Nch+Nch) and the HP8MEx (Nch+Pch). These series combine Nch and Pch MOSFET chips using the latest processes and incorporate new backside heat dissipation packages with superior heat dissipation capabilities. As a result, RDS (on) is significantly reduced, by up to 56%, when compared to standard dual MOSFETs (with RDS (on) measurements of 19.6mΩ for the HSOP8 and 57.0mΩ for the HSMT8 Nch+Nch). This reduction contributes to substantially lower power consumption for the system.
Furthermore, the integration of two chips within a single package results in notable space savings, considerably reducing the required footprint. For example, replacing two single-chip TO-252 MOSFETs with a single HSOP8 reduces the footprint by an impressive 77%.
