Nexperia has introduced its latest innovation in power electronics, announcing the availability of 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging. With RDS (on) values ranging from 30 to 80 mΩ, this release marks a significant expansion of Nexperia's SiC MOSFET portfolio. Following the introduction of SiC MOSFETs in TO-247 packaging in late 2023, this move underscores Nexperia's commitment to offering a diverse range of solutions for power applications. The new NSF0xx120D7A0 MOSFETs cater to the escalating demand for high-performance SiC switches in compact SMD packages like D2PAK-7. Such packages are gaining popularity across various industrial sectors, including electric vehicle (EV) charging infrastructure, uninterruptible power supplies (UPS), and solar and energy storage systems (ESS) inverters.
These SiC MOSFETs from Nexperia are notable for their improved temperature stability. Compared to many SiC devices that can see RDS (on) values increase by over 100% across a temperature range of 25 °C to 175 °C, these MOSFETs only experience a 38% increase. Additionally, these MOSFETs have a tight threshold voltage (VGS (th)) specification, ensuring balanced current-carrying performance when multiple MOSFETs are connected in parallel. Moreover, their low body diode forward voltage (VSD) improves device robustness and efficiency, while also reducing the dead-time requirement during freewheeling operation.
