Nexperia has expanded its NextPower 80 V and 100 V MOSFET lineup by introducing new LFPAK devices in 5x6 mm and 8x8 mm sizes. These MOSFETs are optimized for high efficiency and low electrical noise, making them ideal for use in servers, power supplies, fast chargers, USB-PD, telecommunications, motor control, and other industrial equipment. They come in different versions with on-resistances (RDSon) ranging from 1.8 mΩ to 15 mΩ. Traditionally, MOSFET manufacturers focus on parameters like total gate charge (QG(tot)) and gate-drain charge (QGD) to enhance switching performance. However, Nexperia has found that the reverse recovery charge (Qrr) is just as crucial because it affects the electrical noise (spiking) and electromagnetic interference (EMI) generated during switching. By improving the Qrr, Nexperia's new MOSFETs produce less spiking and EMI, reducing the risk of needing expensive redesigns to pass electromagnetic compatibility (EMC) tests.
The new MOSFETs also have up to 31% lower on-resistance (RDSon) compared to previous models. Later this year, Nexperia plans to further expand its portfolio with an LFPAK88 MOSFET that has an RDSon of 1.2 mΩ at 80 V and will introduce the high-density CCPAK1212 model. To support engineers in designing and testing these new devices, Nexperia offers interactive datasheets that provide detailed, easy-to-understand information about the device performance and behavior.
